2n2222 / 2N2222A npn silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided into one group according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage 2n2222 2N2222A v cbo 60 75 v collector emitter voltage 2n2222 2N2222A v ceo 30 40 v emitter base voltage 2n2222 2N2222A v ebo 5 6 v collector current i c 600 ma power dissipation p tot 625 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c 1. emitter 2. base 3. collector to-92 plastic package
2n2222 / 2N2222A characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at v ce = 10 v, i c = 0.1 ma at v ce = 10 v, i c = 1 ma at v ce = 10 v, i c = 10 ma at v ce = 10 v, i c = 150 ma at v ce = 10 v, i c = 500 ma 2n2222 2N2222A h fe h fe h fe h fe h fe h fe 35 50 75 100 30 40 - - - 300 - - - - - - - - collector base cutoff current at v cb = 50 v at v cb = 60 v 2n2222 2N2222A i cbo - - 10 10 na collector base breakdown voltage at i c = 10 a 2n2222 2N2222A v (br)cbo 60 75 - - v collector emitter breakdown voltage at i c = 10 ma 2n2222 2N2222A v (br)ceo 30 40 - - v emitter base breakdown voltage at i e = 10 a 2n2222 2N2222A v (br)ebo 5 6 - - v collector emitter saturation voltage at i c = 150 ma, i b = 15 ma at i c = 500 ma, i b = 50 ma 2n2222 2N2222A 2n2222 2N2222A v ce(sat) - - - - 0.4 0.3 1.6 1 v base emitter saturation voltage at i c = 150 ma, i b = 15 ma at i c = 500 ma, i b = 50 ma 2n2222 2N2222A 2n2222 2N2222A v be(sat) - 0.6 - - 1.3 1.2 2.6 2 v gain bandwidth product at i c = 20 ma, v ce = 20 v, f = 100 mhz f t 250 - mhz collector output capacitance at v cb = 10 v, f = 1 mhz c ob - 8 pf
2n2222 / 2N2222A
|
